BPV22F document number 81508 rev. 1.4, 13-nov-06 vishay semiconductors www.vishay.com 1 94 8633 silicon pin photodiode description BPV22F is a high speed and high sensitive pin pho- todiode in a plastic package with a spherical side view lens. the epoxy package itself is an ir filter, spec- trally matched to gaas or gaas/gaalas ir emitters ( p = 950 nm). lens radius and chip position are perfectly matched to the chip size, giving high sensitivity without com- promising the viewing angle. in comparison with flat packages the spherical lens package achieves a sensitivity improvement of 80 %. features ? large radiant sensitive area (a = 7.5 mm 2 ) ? wide viewing angle ? = 60 ? improved sensitivity ? fast response times ? plastic package with ir filter ? filter designed for 950 nm transmission ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications infrared remote control and free air transmission sys- tems in combination with ir emitter diodes (tsu...- or tsi...-series). absolute maximum ratings t amb = 25 c, unless otherwise specified e4 parameter test condition symbol value unit reverse voltage v r 60 v power dissipation t amb 25 c p v 215 mw junction temperature t j 100 c operating temperature range t amb - 55 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ ambient r thja 350 k/w
www.vishay.com 2 document number 81508 rev. 1.4, 13-nov-06 BPV22F vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified optical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol min ty p. max unit forward voltage i f = 50 ma v f 11.3v breakdown voltage i r = 100 a, e = 0 v (br) 60 v reverse dark current v r = 10 v, e = 0 i ro 230na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 70 pf serial resistance v r = 12 v, f = 1 mhz r s 400 parameter test condition symbol min ty p. max unit open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 370 mv temp. coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo - 2.6 mv/k short circuit current e e = 1 mw/cm 2 , = 950 nm i k 75 a reverse light current e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra 55 80 a temp. coefficient of i ra e e = 1 mw/cm 2 , = 950 nm, v r = 10 v tk ira 0.1 %/k absolute spectral sensitivity v r = 5 v, = 870 nm s( ) 0.35 a/w v r = 5 v, = 950 nm s( )0.6a/w angle of half sensitivity ? 60 deg wavelength of peak sensitivity p 950 nm range of spectral bandwidth 0.5 870 to 1050 nm quantum efficiency = 950 nm 90 % noise equivalent power v r = 10 v, = 950 nm nep 4 x 10 -14 w/ hz detectivity v r = 10 v, = 950 nm d * 6 x 10 12 cm hz/w rise time v r = 10 v, r l = 1 k , = 820 nm t r 100 ns fall time v r = 10 v, r l = 1 k , = 820 nm t f 100 ns cut-off frequency v r = 12 v, r l = 1 k , = 870 nm f c 4mhz v r = 12 v, r l = 1 k , = 950 nm f c 1mhz
BPV22F document number 81508 rev. 1.4, 13-nov-06 vishay semiconductors www.vishay.com 3 typical characteristics t amb = 25 c, unless otherwise specified figure 1. reverse dark current vs. ambient temperature figure 2. relative reverse light current vs. ambient temperature figure 3. reverse light current vs. irradiance 0 2 4 6 8 0.1 c d - diode capacitance (pf) v r - re v erse v oltage ( v ) 94 8 430 e=0 f = 1 mhz 100 10 1 0.6 0. 8 1.0 1.2 1.4 94 8 409 v r =5 v = 950 nm 100 8 0 60 40 20 0 i - relati v e re v erse light c u rrent t - am b ient temperat u re (c) am b ra rel 0.01 0.1 1 0.1 1 10 100 1000 10 94 8 411 i-re v erse light c u rrent (a) ra e e - irradiance (m w /cm 2 ) v r =5 v = 950 nm figure 4. reverse light current vs. reverse voltage figure 5. diode capacitance vs. reverse voltage figure 6. relative spectral sensitivity vs. wavelength 0.1 1 10 1 10 100 100 94 8 412 1m w /cm 2 0.5 m w /cm 2 0.2 m w /cm 2 0.1 m w /cm 2 i-re v erse light c u rrent (a) ra 0.05 m w /cm 2 0.02 m w /cm 2 = 950 nm v r -re v erse v oltage ( v ) 0 20 40 60 8 0 94 8 407 e=0 f = 1 mhz c d - diode capacitance (pf) v r - re v erse v oltage ( v ) 0.1 100 110 750 8 50 950 1050 0 0.2 0.4 0.6 0. 8 1.2 s ( ) - relati v e spectral sensiti v ity rel - w a v elength (nm) 1150 94 8 40 8 1.0
www.vishay.com 4 document number 81508 rev. 1.4, 13-nov-06 BPV22F vishay semiconductors package dimensions in mm figure 7. relative radiant sensitivity vs. angular displacement 0.4 0.2 0 0.2 0.4 s - relati v e sensiti v ity rel 0.6 94 8 413 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 95 11475
BPV22F document number 81508 rev. 1.4, 13-nov-06 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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